Hou, Songrui; Sun, Bo; Tian, Fei; Cai, Qingan; Xu, Youming; Wang, Shanmin; Chen, Xi; Ren, Zhifeng; Wilson, Chen Li Richard B.
Thermal Conductivity of BAs under Pressure Journal Article
In: Advanced Electronic Materials, no. 2200017, 2022.
Abstract | Links | BibTeX | Tags: high pressure, phonon, thermal transport
@article{nokey,
title = {Thermal Conductivity of BAs under Pressure},
author = {Songrui Hou and Bo Sun and Fei Tian and Qingan Cai and Youming Xu and Shanmin Wang and Xi Chen and Zhifeng Ren and Chen Li Richard B. Wilson},
url = {https://onlinelibrary.wiley.com/doi/10.1002/aelm.202200017},
doi = {10.1002/aelm.202200017},
year = {2022},
date = {2022-07-22},
journal = {Advanced Electronic Materials},
number = {2200017},
abstract = {The thermal conductivity of boron arsenide (BAs) is believed to be influenced by phonon scattering selection rules due to its special phonon dispersion. Compression of BAs leads to significant changes in phonon dispersion, which allows for a test of first principles theories for how phonon dispersion affects three- and four-phonon scattering rates. This study reports the thermal conductivity of BAs from 0 to 30 GPa. Thermal conductivity vs. pressure of BAs is measured by time-domain thermoreflectance with a diamond anvil cell. In stark contrast to what is typical for nonmetallic crystals, BAs is observed to have a pressure independent thermal conductivity below 30 GPa. The thermal conductivity of nonmetallic crystals typically increases upon compression. The unusual pressure independence of BAs's thermal conductivity shows the important relationship between phonon dispersion properties and three- and four-phonon scattering rates.},
keywords = {high pressure, phonon, thermal transport},
pubstate = {published},
tppubtype = {article}
}
The thermal conductivity of boron arsenide (BAs) is believed to be influenced by phonon scattering selection rules due to its special phonon dispersion. Compression of BAs leads to significant changes in phonon dispersion, which allows for a test of first principles theories for how phonon dispersion affects three- and four-phonon scattering rates. This study reports the thermal conductivity of BAs from 0 to 30 GPa. Thermal conductivity vs. pressure of BAs is measured by time-domain thermoreflectance with a diamond anvil cell. In stark contrast to what is typical for nonmetallic crystals, BAs is observed to have a pressure independent thermal conductivity below 30 GPa. The thermal conductivity of nonmetallic crystals typically increases upon compression. The unusual pressure independence of BAs's thermal conductivity shows the important relationship between phonon dispersion properties and three- and four-phonon scattering rates.
Angeles, F.; Sun, Q.; Ortiz, V.; Shi, J.; Li, C.; Wilson, R. B.
Interfacial thermal transport in spin caloritronic material systems Journal Article
In: Physical Review Materials, iss. 5, no. 114403, 2021.
BibTeX | Tags: lattice dynamics, thermal transport
@article{Wilson2021,
title = {Interfacial thermal transport in spin caloritronic material systems},
author = {F. Angeles and Q. Sun and V. Ortiz and J. Shi and C. Li and R. B. Wilson},
year = {2021},
date = {2021-11-11},
urldate = {2021-07-01},
journal = {Physical Review Materials},
number = {114403},
issue = {5},
keywords = {lattice dynamics, thermal transport},
pubstate = {published},
tppubtype = {article}
}
Liu, Junyan; Strobel, Timothy A.; Zhang, Haidong; Abernathy, Doug; Li, Chen; Hong, Jiawang
Significant phase-space-driven thermal transport suppression in BC8 silicon Journal Article
In: Materials Today Physics, vol. 21, pp. 100566, 2021.
Abstract | Links | BibTeX | Tags: anharmonicity, lattice dynamics, phonon, thermal transport
@article{nokey,
title = {Significant phase-space-driven thermal transport suppression in BC8 silicon},
author = {Junyan Liu and Timothy A. Strobel and Haidong Zhang and Doug Abernathy and Chen Li and Jiawang Hong},
url = {https://www.sciencedirect.com/science/article/pii/S2542529321002273?dgcid=author},
doi = {10.1016/j.mtphys.2021.100566},
year = {2021},
date = {2021-10-29},
journal = {Materials Today Physics},
volume = {21},
pages = {100566},
abstract = {The BC8 silicon allotrope has a lattice thermal conductivity 1\textendash2 orders of magnitude lower than that of diamond-cubic silicon. In the current work, the phonon density of states, phonon dispersion, and lattice thermal conductivity are investigated by inelastic neutron scattering measurements and first-principles calculations. Flat phonon bands are found to play a critical role in the reduction of lattice thermal conductivity in BC8\textendashSi. Such bands in the low-energy range enhance the phonon scattering between acoustic and low-energy optical phonons, while bands in the intermediate-energy range act as a scattering bridge between the high- and low-energy optical phonons. They significantly enlarge the phonon-phonon scattering phase space and reduces the lattice thermal conductivity in this novel silicon allotrope. This work provides insights into the significant reduction of the lattice thermal conductivity in BC8\textendashSi, thus expanding the understanding of novel silicon allotropes and their development for electronic devices.},
keywords = {anharmonicity, lattice dynamics, phonon, thermal transport},
pubstate = {published},
tppubtype = {article}
}
The BC8 silicon allotrope has a lattice thermal conductivity 1–2 orders of magnitude lower than that of diamond-cubic silicon. In the current work, the phonon density of states, phonon dispersion, and lattice thermal conductivity are investigated by inelastic neutron scattering measurements and first-principles calculations. Flat phonon bands are found to play a critical role in the reduction of lattice thermal conductivity in BC8–Si. Such bands in the low-energy range enhance the phonon scattering between acoustic and low-energy optical phonons, while bands in the intermediate-energy range act as a scattering bridge between the high- and low-energy optical phonons. They significantly enlarge the phonon-phonon scattering phase space and reduces the lattice thermal conductivity in this novel silicon allotrope. This work provides insights into the significant reduction of the lattice thermal conductivity in BC8–Si, thus expanding the understanding of novel silicon allotropes and their development for electronic devices.
Wei, B.; Cai, Q.; Sun, Q.; Su, Y.; Said, A. H.; Abernathy, D. L.; Hong, J.; Li, C.
Matryoshka Phonon Twining in a-GaN Journal Article
In: Communications Physics, vol. 4, no. 227, 2021.
Abstract | Links | BibTeX | Tags: lattice expansion, metal-insulator transition, phonon, thermal transport
@article{Li2021,
title = {Matryoshka Phonon Twining in a-GaN},
author = {B. Wei and Q. Cai and Q. Sun and Y. Su and A. H. Said and D. L. Abernathy and J. Hong and
C. Li},
url = {https://www.nature.com/articles/s42005-021-00727-9},
doi = {10.1038/s42005-021-00727-9},
year = {2021},
date = {2021-10-12},
urldate = {2021-10-12},
journal = {Communications Physics},
volume = {4},
number = {227},
abstract = {Understanding lattice dynamics is crucial for effective thermal management in electronic devices because phonons dominate thermal transport in most semiconductors. α-GaN has become a focus of interest as one of the most important third-generation power semiconductors, however, the knowledge on its phonon dynamics remains limited. Here we show a Matryoshka phonon dispersion of α-GaN with the complementary inelastic X-ray and neutron scattering techniques and the first-principles calculations. Such Matryoshka twinning throughout the basal plane of the reciprocal space is demonstrated to amplify the anharmonicity of the related phonons through creating abundant three-phonon scattering channels and cutting the lifetime of affected modes by more than 50%. Such phonon topology contributes to reducing the in-plane thermal transport, thus the anisotropic thermal conductivity of α-GaN. The results not only have implications for engineering the thermal performance of α-GaN, but also offer valuable insights on the role of anomalous phonon topology in thermal transport of other technically semiconductors.},
keywords = {lattice expansion, metal-insulator transition, phonon, thermal transport},
pubstate = {published},
tppubtype = {article}
}
Understanding lattice dynamics is crucial for effective thermal management in electronic devices because phonons dominate thermal transport in most semiconductors. α-GaN has become a focus of interest as one of the most important third-generation power semiconductors, however, the knowledge on its phonon dynamics remains limited. Here we show a Matryoshka phonon dispersion of α-GaN with the complementary inelastic X-ray and neutron scattering techniques and the first-principles calculations. Such Matryoshka twinning throughout the basal plane of the reciprocal space is demonstrated to amplify the anharmonicity of the related phonons through creating abundant three-phonon scattering channels and cutting the lifetime of affected modes by more than 50%. Such phonon topology contributes to reducing the in-plane thermal transport, thus the anisotropic thermal conductivity of α-GaN. The results not only have implications for engineering the thermal performance of α-GaN, but also offer valuable insights on the role of anomalous phonon topology in thermal transport of other technically semiconductors.
Wei, B.; Sun, Q.; Li, C.; Hong, J.
Phonon anharmonicity: a pertinent review of recent progress and perspective Journal Article
In: SCIENCE CHINA Physics, Mechanics & Astronomy, vol. 64, no. 117001, 2021.
Links | BibTeX | Tags: anharmonicity, lifetime, metal-insulator transition, neutron scattering, thermal transport, vibrational entropy
@article{Hong2021,
title = {Phonon anharmonicity: a pertinent review of recent progress and perspective},
author = {B. Wei and Q. Sun and C. Li and J. Hong},
url = {https://link.springer.com/article/10.1007/s11433-021-1748-7},
doi = {10.1007/s11433-021-1748-7},
year = {2021},
date = {2021-09-28},
urldate = {2021-07-01},
journal = {SCIENCE CHINA Physics, Mechanics \& Astronomy},
volume = {64},
number = {117001},
keywords = {anharmonicity, lifetime, metal-insulator transition, neutron scattering, thermal transport, vibrational entropy},
pubstate = {published},
tppubtype = {article}
}
Niedziela, J. L.; Bansal, D.; Ding, J.; Lanigan-Atkins, T.; Li, Chen; May, A. F.; Wang, H.; Lin, J. Y. Y.; Abernathy, D. L.; Ehlers, G.; Huq, A.; Parshall, D.; Lynn, J. W.; Delaire, O.
Controlling phonon lifetimes via sublattice disordering in AgBiSe2 Journal Article
In: Phys. Rev. Materials, vol. 4, pp. 105402, 2020.
Abstract | Links | BibTeX | Tags: lattice dynamics, phonon, thermal transport
@article{Delaire2020,
title = {Controlling phonon lifetimes via sublattice disordering in AgBiSe2},
author = {J. L. Niedziela and D. Bansal and J. Ding and T. Lanigan-Atkins and Chen Li and A. F. May and H. Wang and J. Y. Y. Lin and D. L. Abernathy and G. Ehlers and A. Huq and D. Parshall and J. W. Lynn and O. Delaire},
url = {https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.4.105402},
doi = {10.1103/PhysRevMaterials.4.105402},
year = {2020},
date = {2020-08-04},
journal = {Phys. Rev. Materials},
volume = {4},
pages = {105402},
abstract = {Understanding and controlling microscopic heat transfer mechanisms in solids is critical to material design in numerous technological applications. Yet, the current understanding of thermal transport in semiconductors and insulators is limited by the difficulty in directly measuring individual phonon lifetimes and mean free paths, and studying their dependence on the microscopic state of the material. Here we report our measurements of microscopic phonon scattering rates in AgBiSe2, which exhibits a controllable, reversible change directly linked to microstructure evolution near a reversible structural phase transition, that directly impacts the thermal conductivity. We demonstrate a steplike doubling of phonon scattering rates resultant from the cation disordering at the structural transition. To rationalize the neutron scattering data, we leverage a stepwise approach to account for alterations to the thermal conductivity that are imparted by distinct scattering mechanisms. These results highlight the potential of tunable microstructures housed in a stable crystal matrix to provide a practical route to tailor phonon scattering to optimize thermal transport properties.},
keywords = {lattice dynamics, phonon, thermal transport},
pubstate = {published},
tppubtype = {article}
}
Understanding and controlling microscopic heat transfer mechanisms in solids is critical to material design in numerous technological applications. Yet, the current understanding of thermal transport in semiconductors and insulators is limited by the difficulty in directly measuring individual phonon lifetimes and mean free paths, and studying their dependence on the microscopic state of the material. Here we report our measurements of microscopic phonon scattering rates in AgBiSe2, which exhibits a controllable, reversible change directly linked to microstructure evolution near a reversible structural phase transition, that directly impacts the thermal conductivity. We demonstrate a steplike doubling of phonon scattering rates resultant from the cation disordering at the structural transition. To rationalize the neutron scattering data, we leverage a stepwise approach to account for alterations to the thermal conductivity that are imparted by distinct scattering mechanisms. These results highlight the potential of tunable microstructures housed in a stable crystal matrix to provide a practical route to tailor phonon scattering to optimize thermal transport properties.
Sun, Qiyang; Li, Chen W.
Exploring nanoscale heat transport via neutron scattering Book Chapter
In: Liao, Bolin (Ed.): pp. 11-1~14, 2020, ISBN: 978-0-7503-1736-8.
Abstract | Links | BibTeX | Tags: lattice dynamics, phonon, thermal transport
@inbook{Sun2020,
title = {Exploring nanoscale heat transport via neutron scattering},
author = {Qiyang Sun and Chen W. Li},
editor = {Bolin Liao},
url = {https://iopscience.iop.org/book/978-0-7503-1738-2},
isbn = {978-0-7503-1736-8},
year = {2020},
date = {2020-03-01},
pages = {11-1~14},
abstract = {Nanoscale Energy Transport
Emerging phenomena, methods and applications
This book brings together leading names in the field of nanoscale energy transport to provide a comprehensive and insightful review of this developing topic. The text covers new developments in the scientific basis and the practical relevance of nanoscale energy transport, highlighting the emerging effects at the nanoscale that qualitatively differ from those at the macroscopic scale. Throughout the book, microscopic energy carriers are discussed, including photons, electrons and magnons. State-of-the-art computational and experimental nanoscale energy transport methods are reviewed, and a broad range of materials system topics are considered, from interfaces and molecular junctions to nanostructured bulk materials. Nanoscale Energy Transport is a valuable reference for researchers in physics, materials, mechanical and electrical engineering, and it provides an excellent resource for graduate students.},
keywords = {lattice dynamics, phonon, thermal transport},
pubstate = {published},
tppubtype = {inbook}
}
Nanoscale Energy Transport
Emerging phenomena, methods and applications
This book brings together leading names in the field of nanoscale energy transport to provide a comprehensive and insightful review of this developing topic. The text covers new developments in the scientific basis and the practical relevance of nanoscale energy transport, highlighting the emerging effects at the nanoscale that qualitatively differ from those at the macroscopic scale. Throughout the book, microscopic energy carriers are discussed, including photons, electrons and magnons. State-of-the-art computational and experimental nanoscale energy transport methods are reviewed, and a broad range of materials system topics are considered, from interfaces and molecular junctions to nanostructured bulk materials. Nanoscale Energy Transport is a valuable reference for researchers in physics, materials, mechanical and electrical engineering, and it provides an excellent resource for graduate students.
Emerging phenomena, methods and applications
This book brings together leading names in the field of nanoscale energy transport to provide a comprehensive and insightful review of this developing topic. The text covers new developments in the scientific basis and the practical relevance of nanoscale energy transport, highlighting the emerging effects at the nanoscale that qualitatively differ from those at the macroscopic scale. Throughout the book, microscopic energy carriers are discussed, including photons, electrons and magnons. State-of-the-art computational and experimental nanoscale energy transport methods are reviewed, and a broad range of materials system topics are considered, from interfaces and molecular junctions to nanostructured bulk materials. Nanoscale Energy Transport is a valuable reference for researchers in physics, materials, mechanical and electrical engineering, and it provides an excellent resource for graduate students.
Bansal, D; Li, Chen W; Said, A H; Abernathy, D L; Yan, J
Electron-phonon coupling and thermal transport in the thermoelectric compound Mo3Sb7−xTex Journal Article
In: Physical Review B, vol. 92, no. 21, pp. 214301, 2015.
Links | BibTeX | Tags: electron-phonon coupling, phonon, thermal transport, thermoelectric
@article{bansal_electron-phonon_2015-2,
title = {Electron-phonon coupling and thermal transport in the thermoelectric compound Mo3Sb7−xTex},
author = {D Bansal and Chen W Li and A H Said and D L Abernathy and J Yan},
url = {https://link.aps.org/doi/10.1103/PhysRevB.92.214301},
doi = {10.1103/PhysRevB.92.214301},
year = {2015},
date = {2015-01-01},
journal = {Physical Review B},
volume = {92},
number = {21},
pages = {214301},
keywords = {electron-phonon coupling, phonon, thermal transport, thermoelectric},
pubstate = {published},
tppubtype = {article}
}