Sun, Qiyang; Hou, Songrui; Wei, Bin; Su, Yaokun; Ortiz, Victor; Sun, Bo; Lin, Jiao Y. Y.; Smith, Hillary; Danilkin, Sergey; Abernathy, Douglas L.; Wilson, Richard B.; Li, Chen
Spin-Phonon Interactions Induced Anomalous Thermal Conductivity in Nickel (II) Oxide Journal Article
In: Materials Today Physics, pp. 101094, 2023.
Abstract | Links | BibTeX | Tags: anharmonicity, DFT, lattice dynamics, magnon, magnon-phonon, neutron, oxide, phonon, thermal transport
@article{Sun2023,
title = {Spin-Phonon Interactions Induced Anomalous Thermal Conductivity in Nickel (II) Oxide},
author = {Qiyang Sun and Songrui Hou and Bin Wei and Yaokun Su and Victor Ortiz and Bo Sun and Jiao Y. Y. Lin and Hillary Smith and Sergey Danilkin and Douglas L. Abernathy and Richard B. Wilson and Chen Li},
url = {https://www.sciencedirect.com/science/article/abs/pii/S254252932300130X},
doi = {10.1016/j.mtphys.2023.101094},
year = {2023},
date = {2023-05-02},
urldate = {2023-05-02},
journal = {Materials Today Physics},
pages = {101094},
abstract = {Nickel (II) oxide is a prominent candidate for spintronic and spin-caloritronic applications operating at room temperature. Although there are extensive studies on nickel oxide, the roles of magnon- and spin-phonon interactions on thermal transport are not well understood. In the present work, the relationship between spin-phonon interactions and thermal transport is investigated by performing inelastic neutron scattering, time-domain thermoreflectance thermal conductivity measurements, and atomistic thermal transport calculations. Inelastic neutron scattering measurements of the magnon lifetime imply that magnon thermal conductivity is trivial, and so heat is conducted only by phonons. Time-domain thermoreflectance measurements of the thermal conductivity vs. temperature follow T-1.5 in the antiferromagnetic phase. This temperature dependence cannot be explained by phonon-isotope and phonon-defect scattering or phonon softening. Instead, we attribute this to magnon-phonon scattering and spin-induced dynamic symmetry breaking. The spin-phonon interactions are saturated in the paramagnetic phase and lead to a weaker temperature dependence of T-1.0 at 550-700 K. These results reveal the importance of spin-phonon interactions on lattice thermal transport, shedding light on the engineering of functional antiferromagnetic spintronic and spin-caloritronic materials through these interactions.},
keywords = {anharmonicity, DFT, lattice dynamics, magnon, magnon-phonon, neutron, oxide, phonon, thermal transport},
pubstate = {published},
tppubtype = {article}
}
Nickel (II) oxide is a prominent candidate for spintronic and spin-caloritronic applications operating at room temperature. Although there are extensive studies on nickel oxide, the roles of magnon- and spin-phonon interactions on thermal transport are not well understood. In the present work, the relationship between spin-phonon interactions and thermal transport is investigated by performing inelastic neutron scattering, time-domain thermoreflectance thermal conductivity measurements, and atomistic thermal transport calculations. Inelastic neutron scattering measurements of the magnon lifetime imply that magnon thermal conductivity is trivial, and so heat is conducted only by phonons. Time-domain thermoreflectance measurements of the thermal conductivity vs. temperature follow T-1.5 in the antiferromagnetic phase. This temperature dependence cannot be explained by phonon-isotope and phonon-defect scattering or phonon softening. Instead, we attribute this to magnon-phonon scattering and spin-induced dynamic symmetry breaking. The spin-phonon interactions are saturated in the paramagnetic phase and lead to a weaker temperature dependence of T-1.0 at 550-700 K. These results reveal the importance of spin-phonon interactions on lattice thermal transport, shedding light on the engineering of functional antiferromagnetic spintronic and spin-caloritronic materials through these interactions.
Hou, Songrui; Wilson, Richard B.; Li, Chen
Response of vibrational properties and thermal conductivity of perovskites to pressure Journal Article
In: Materials Today Physics, vol. 32, no. 101010, 2023.
Abstract | Links | BibTeX | Tags: high pressure, phonon, thermal transport
@article{Hou2023,
title = {Response of vibrational properties and thermal conductivity of perovskites to pressure},
author = {Songrui Hou and Richard B. Wilson and Chen Li},
url = {https://www.sciencedirect.com/science/article/pii/S2542529323000469#gs7},
doi = {doi.org/10.1016/j.mtphys.2023.101010},
year = {2023},
date = {2023-02-10},
journal = {Materials Today Physics},
volume = {32},
number = {101010},
abstract = {We study the response of SrTiO3 and KTaO3's vibrational properties and thermal conductivity to pressurization. Our goal is to improve the understanding of the relationship between crystal structure, vibrational dynamics, and thermal conductivity in perovskites. We measure the thermal conductivity of SrTiO3 and KTaO3 up to 28 GPa by time-domain thermoreflectance. We also perform Raman scattering and stimulated Brillouin scattering measurements of SrTiO3 and KTaO3 to characterize changes in vibrational dynamics with pressure. The thermal conductivity of SrTiO3 increases under pressure with a slope comparable to that of other perovskites whose thermal conductivity has been measured versus pressure. Alternatively, the thermal conductivity of KTaO3 has a stronger pressure dependence than that of other materials with similar crystal structure. We correlate pressure-induced changes in Raman and Brillouin spectra with pressure-induced changes in thermal conductivity. We show that pressure-induced changes in phonon lifetimes dominate the pressure dependence of thermal conductivity. This study provides benchmark knowledge of why Lambda depends on pressure and improves understanding of structure/thermal-property relationships.
},
keywords = {high pressure, phonon, thermal transport},
pubstate = {published},
tppubtype = {article}
}
We study the response of SrTiO3 and KTaO3's vibrational properties and thermal conductivity to pressurization. Our goal is to improve the understanding of the relationship between crystal structure, vibrational dynamics, and thermal conductivity in perovskites. We measure the thermal conductivity of SrTiO3 and KTaO3 up to 28 GPa by time-domain thermoreflectance. We also perform Raman scattering and stimulated Brillouin scattering measurements of SrTiO3 and KTaO3 to characterize changes in vibrational dynamics with pressure. The thermal conductivity of SrTiO3 increases under pressure with a slope comparable to that of other perovskites whose thermal conductivity has been measured versus pressure. Alternatively, the thermal conductivity of KTaO3 has a stronger pressure dependence than that of other materials with similar crystal structure. We correlate pressure-induced changes in Raman and Brillouin spectra with pressure-induced changes in thermal conductivity. We show that pressure-induced changes in phonon lifetimes dominate the pressure dependence of thermal conductivity. This study provides benchmark knowledge of why Lambda depends on pressure and improves understanding of structure/thermal-property relationships.
Hou, Songrui; Sun, Bo; Tian, Fei; Cai, Qingan; Xu, Youming; Wang, Shanmin; Chen, Xi; Ren, Zhifeng; Li, Chen; Wilson, Richard B.
Thermal Conductivity of BAs under Pressure Journal Article
In: Advanced Electronic Materials, no. 2200017, 2022.
Abstract | Links | BibTeX | Tags: high pressure, phonon, thermal transport
@article{nokey,
title = {Thermal Conductivity of BAs under Pressure},
author = {Songrui Hou and Bo Sun and Fei Tian and Qingan Cai and Youming Xu and Shanmin Wang and Xi Chen and Zhifeng Ren and Chen Li and Richard B. Wilson},
url = {https://onlinelibrary.wiley.com/doi/10.1002/aelm.202200017},
doi = {10.1002/aelm.202200017},
year = {2022},
date = {2022-07-22},
urldate = {2022-07-22},
journal = {Advanced Electronic Materials},
number = {2200017},
abstract = {The thermal conductivity of boron arsenide (BAs) is believed to be influenced by phonon scattering selection rules due to its special phonon dispersion. Compression of BAs leads to significant changes in phonon dispersion, which allows for a test of first principles theories for how phonon dispersion affects three- and four-phonon scattering rates. This study reports the thermal conductivity of BAs from 0 to 30 GPa. Thermal conductivity vs. pressure of BAs is measured by time-domain thermoreflectance with a diamond anvil cell. In stark contrast to what is typical for nonmetallic crystals, BAs is observed to have a pressure independent thermal conductivity below 30 GPa. The thermal conductivity of nonmetallic crystals typically increases upon compression. The unusual pressure independence of BAs's thermal conductivity shows the important relationship between phonon dispersion properties and three- and four-phonon scattering rates.},
keywords = {high pressure, phonon, thermal transport},
pubstate = {published},
tppubtype = {article}
}
The thermal conductivity of boron arsenide (BAs) is believed to be influenced by phonon scattering selection rules due to its special phonon dispersion. Compression of BAs leads to significant changes in phonon dispersion, which allows for a test of first principles theories for how phonon dispersion affects three- and four-phonon scattering rates. This study reports the thermal conductivity of BAs from 0 to 30 GPa. Thermal conductivity vs. pressure of BAs is measured by time-domain thermoreflectance with a diamond anvil cell. In stark contrast to what is typical for nonmetallic crystals, BAs is observed to have a pressure independent thermal conductivity below 30 GPa. The thermal conductivity of nonmetallic crystals typically increases upon compression. The unusual pressure independence of BAs's thermal conductivity shows the important relationship between phonon dispersion properties and three- and four-phonon scattering rates.
Angeles, F.; Sun, Q.; Ortiz, V.; Shi, J.; Li, C.; Wilson, R. B.
Interfacial thermal transport in spin caloritronic material systems Journal Article
In: Physical Review Materials, iss. 5, no. 114403, 2021.
Abstract | Links | BibTeX | Tags: lattice dynamics, thermal transport
@article{Wilson2021,
title = {Interfacial thermal transport in spin caloritronic material systems},
author = {F. Angeles and Q. Sun and V. Ortiz and J. Shi and C. Li and R. B. Wilson},
url = {https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.5.114403},
doi = {10.1103/PhysRevMaterials.5.114403},
year = {2021},
date = {2021-11-11},
urldate = {2021-11-11},
journal = {Physical Review Materials},
number = {114403},
issue = {5},
abstract = {Interfaces often govern the thermal performance of nanoscale devices and nanostructured materials. As a result, accurate knowledge of thermal interface conductance is necessary to model the temperature response of nanoscale devices or nanostructured materials to heating. Here, we report the thermal boundary conductance between metals and insulators that are commonly used in spin-caloritronic experiments. We use time-domain thermoreflectance to measure the interface conductance between metals such as Au, Pt, Ta, Cu, and Al with garnet and oxide substrates, e.g., NiO, yttrium iron garnet (YIG), thulium iron garnet (TmIG), Cr2O3, and sapphire. We find that, at room temperature, the interface conductance in these types of material systems range from 50 to 300MWm−2K−1. We also measure the interface conductance between Pt and YIG at temperatures between 80 and 350 K. At room temperature, the interface conductance of Pt/YIG is 170MWm−2K−1 and the Kapitza length is ∼40 nm. A Kapitza length of 40 nm means that, in the presence of a steady-state heat current, the temperature drop at the Pt/YIG interface is equal to the temperature drop across a 40-nm-thick layer of YIG. At 80 K, the interface conductance of Pt/YIG is 60MWm−2K−1, corresponding to a Kapitza length of ∼300 nm.},
keywords = {lattice dynamics, thermal transport},
pubstate = {published},
tppubtype = {article}
}
Interfaces often govern the thermal performance of nanoscale devices and nanostructured materials. As a result, accurate knowledge of thermal interface conductance is necessary to model the temperature response of nanoscale devices or nanostructured materials to heating. Here, we report the thermal boundary conductance between metals and insulators that are commonly used in spin-caloritronic experiments. We use time-domain thermoreflectance to measure the interface conductance between metals such as Au, Pt, Ta, Cu, and Al with garnet and oxide substrates, e.g., NiO, yttrium iron garnet (YIG), thulium iron garnet (TmIG), Cr2O3, and sapphire. We find that, at room temperature, the interface conductance in these types of material systems range from 50 to 300MWm−2K−1. We also measure the interface conductance between Pt and YIG at temperatures between 80 and 350 K. At room temperature, the interface conductance of Pt/YIG is 170MWm−2K−1 and the Kapitza length is ∼40 nm. A Kapitza length of 40 nm means that, in the presence of a steady-state heat current, the temperature drop at the Pt/YIG interface is equal to the temperature drop across a 40-nm-thick layer of YIG. At 80 K, the interface conductance of Pt/YIG is 60MWm−2K−1, corresponding to a Kapitza length of ∼300 nm.
Liu, Junyan; Strobel, Timothy A.; Zhang, Haidong; Abernathy, Doug; Li, Chen; Hong, Jiawang
Significant phase-space-driven thermal transport suppression in BC8 silicon Journal Article
In: Materials Today Physics, vol. 21, pp. 100566, 2021.
Abstract | Links | BibTeX | Tags: anharmonicity, lattice dynamics, phonon, thermal transport
@article{nokey,
title = {Significant phase-space-driven thermal transport suppression in BC8 silicon},
author = {Junyan Liu and Timothy A. Strobel and Haidong Zhang and Doug Abernathy and Chen Li and Jiawang Hong},
url = {https://www.sciencedirect.com/science/article/pii/S2542529321002273?dgcid=author},
doi = {10.1016/j.mtphys.2021.100566},
year = {2021},
date = {2021-10-29},
journal = {Materials Today Physics},
volume = {21},
pages = {100566},
abstract = {The BC8 silicon allotrope has a lattice thermal conductivity 1\textendash2 orders of magnitude lower than that of diamond-cubic silicon. In the current work, the phonon density of states, phonon dispersion, and lattice thermal conductivity are investigated by inelastic neutron scattering measurements and first-principles calculations. Flat phonon bands are found to play a critical role in the reduction of lattice thermal conductivity in BC8\textendashSi. Such bands in the low-energy range enhance the phonon scattering between acoustic and low-energy optical phonons, while bands in the intermediate-energy range act as a scattering bridge between the high- and low-energy optical phonons. They significantly enlarge the phonon-phonon scattering phase space and reduces the lattice thermal conductivity in this novel silicon allotrope. This work provides insights into the significant reduction of the lattice thermal conductivity in BC8\textendashSi, thus expanding the understanding of novel silicon allotropes and their development for electronic devices.},
keywords = {anharmonicity, lattice dynamics, phonon, thermal transport},
pubstate = {published},
tppubtype = {article}
}
The BC8 silicon allotrope has a lattice thermal conductivity 1–2 orders of magnitude lower than that of diamond-cubic silicon. In the current work, the phonon density of states, phonon dispersion, and lattice thermal conductivity are investigated by inelastic neutron scattering measurements and first-principles calculations. Flat phonon bands are found to play a critical role in the reduction of lattice thermal conductivity in BC8–Si. Such bands in the low-energy range enhance the phonon scattering between acoustic and low-energy optical phonons, while bands in the intermediate-energy range act as a scattering bridge between the high- and low-energy optical phonons. They significantly enlarge the phonon-phonon scattering phase space and reduces the lattice thermal conductivity in this novel silicon allotrope. This work provides insights into the significant reduction of the lattice thermal conductivity in BC8–Si, thus expanding the understanding of novel silicon allotropes and their development for electronic devices.
Wei, B.; Cai, Q.; Sun, Q.; Su, Y.; Said, A. H.; Abernathy, D. L.; Hong, J.; Li, C.
Matryoshka Phonon Twining in a-GaN Journal Article
In: Communications Physics, vol. 4, no. 227, 2021.
Abstract | Links | BibTeX | Tags: lattice expansion, metal-insulator transition, phonon, thermal transport
@article{Li2021,
title = {Matryoshka Phonon Twining in a-GaN},
author = {B. Wei and Q. Cai and Q. Sun and Y. Su and A. H. Said and D. L. Abernathy and J. Hong and
C. Li},
url = {https://www.nature.com/articles/s42005-021-00727-9},
doi = {10.1038/s42005-021-00727-9},
year = {2021},
date = {2021-10-12},
urldate = {2021-10-12},
journal = {Communications Physics},
volume = {4},
number = {227},
abstract = {Understanding lattice dynamics is crucial for effective thermal management in electronic devices because phonons dominate thermal transport in most semiconductors. α-GaN has become a focus of interest as one of the most important third-generation power semiconductors, however, the knowledge on its phonon dynamics remains limited. Here we show a Matryoshka phonon dispersion of α-GaN with the complementary inelastic X-ray and neutron scattering techniques and the first-principles calculations. Such Matryoshka twinning throughout the basal plane of the reciprocal space is demonstrated to amplify the anharmonicity of the related phonons through creating abundant three-phonon scattering channels and cutting the lifetime of affected modes by more than 50%. Such phonon topology contributes to reducing the in-plane thermal transport, thus the anisotropic thermal conductivity of α-GaN. The results not only have implications for engineering the thermal performance of α-GaN, but also offer valuable insights on the role of anomalous phonon topology in thermal transport of other technically semiconductors.},
keywords = {lattice expansion, metal-insulator transition, phonon, thermal transport},
pubstate = {published},
tppubtype = {article}
}
Understanding lattice dynamics is crucial for effective thermal management in electronic devices because phonons dominate thermal transport in most semiconductors. α-GaN has become a focus of interest as one of the most important third-generation power semiconductors, however, the knowledge on its phonon dynamics remains limited. Here we show a Matryoshka phonon dispersion of α-GaN with the complementary inelastic X-ray and neutron scattering techniques and the first-principles calculations. Such Matryoshka twinning throughout the basal plane of the reciprocal space is demonstrated to amplify the anharmonicity of the related phonons through creating abundant three-phonon scattering channels and cutting the lifetime of affected modes by more than 50%. Such phonon topology contributes to reducing the in-plane thermal transport, thus the anisotropic thermal conductivity of α-GaN. The results not only have implications for engineering the thermal performance of α-GaN, but also offer valuable insights on the role of anomalous phonon topology in thermal transport of other technically semiconductors.
Wei, B.; Sun, Q.; Li, C.; Hong, J.
Phonon anharmonicity: a pertinent review of recent progress and perspective Journal Article
In: SCIENCE CHINA Physics, Mechanics & Astronomy, vol. 64, no. 117001, 2021.
Links | BibTeX | Tags: anharmonicity, lifetime, metal-insulator transition, neutron scattering, thermal transport, vibrational entropy
@article{Hong2021,
title = {Phonon anharmonicity: a pertinent review of recent progress and perspective},
author = {B. Wei and Q. Sun and C. Li and J. Hong},
url = {https://link.springer.com/article/10.1007/s11433-021-1748-7},
doi = {10.1007/s11433-021-1748-7},
year = {2021},
date = {2021-09-28},
urldate = {2021-07-01},
journal = {SCIENCE CHINA Physics, Mechanics \& Astronomy},
volume = {64},
number = {117001},
keywords = {anharmonicity, lifetime, metal-insulator transition, neutron scattering, thermal transport, vibrational entropy},
pubstate = {published},
tppubtype = {article}
}
Niedziela, J. L.; Bansal, D.; Ding, J.; Lanigan-Atkins, T.; Li, Chen; May, A. F.; Wang, H.; Lin, J. Y. Y.; Abernathy, D. L.; Ehlers, G.; Huq, A.; Parshall, D.; Lynn, J. W.; Delaire, O.
Controlling phonon lifetimes via sublattice disordering in AgBiSe2 Journal Article
In: Phys. Rev. Materials, vol. 4, pp. 105402, 2020.
Abstract | Links | BibTeX | Tags: lattice dynamics, phonon, thermal transport
@article{Delaire2020,
title = {Controlling phonon lifetimes via sublattice disordering in AgBiSe2},
author = {J. L. Niedziela and D. Bansal and J. Ding and T. Lanigan-Atkins and Chen Li and A. F. May and H. Wang and J. Y. Y. Lin and D. L. Abernathy and G. Ehlers and A. Huq and D. Parshall and J. W. Lynn and O. Delaire},
url = {https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.4.105402},
doi = {10.1103/PhysRevMaterials.4.105402},
year = {2020},
date = {2020-08-04},
journal = {Phys. Rev. Materials},
volume = {4},
pages = {105402},
abstract = {Understanding and controlling microscopic heat transfer mechanisms in solids is critical to material design in numerous technological applications. Yet, the current understanding of thermal transport in semiconductors and insulators is limited by the difficulty in directly measuring individual phonon lifetimes and mean free paths, and studying their dependence on the microscopic state of the material. Here we report our measurements of microscopic phonon scattering rates in AgBiSe2, which exhibits a controllable, reversible change directly linked to microstructure evolution near a reversible structural phase transition, that directly impacts the thermal conductivity. We demonstrate a steplike doubling of phonon scattering rates resultant from the cation disordering at the structural transition. To rationalize the neutron scattering data, we leverage a stepwise approach to account for alterations to the thermal conductivity that are imparted by distinct scattering mechanisms. These results highlight the potential of tunable microstructures housed in a stable crystal matrix to provide a practical route to tailor phonon scattering to optimize thermal transport properties.},
keywords = {lattice dynamics, phonon, thermal transport},
pubstate = {published},
tppubtype = {article}
}
Understanding and controlling microscopic heat transfer mechanisms in solids is critical to material design in numerous technological applications. Yet, the current understanding of thermal transport in semiconductors and insulators is limited by the difficulty in directly measuring individual phonon lifetimes and mean free paths, and studying their dependence on the microscopic state of the material. Here we report our measurements of microscopic phonon scattering rates in AgBiSe2, which exhibits a controllable, reversible change directly linked to microstructure evolution near a reversible structural phase transition, that directly impacts the thermal conductivity. We demonstrate a steplike doubling of phonon scattering rates resultant from the cation disordering at the structural transition. To rationalize the neutron scattering data, we leverage a stepwise approach to account for alterations to the thermal conductivity that are imparted by distinct scattering mechanisms. These results highlight the potential of tunable microstructures housed in a stable crystal matrix to provide a practical route to tailor phonon scattering to optimize thermal transport properties.
Sun, Qiyang; Li, Chen W.
Exploring nanoscale heat transport via neutron scattering Book Chapter
In: Liao, Bolin (Ed.): pp. 11-1~14, 2020, ISBN: 978-0-7503-1736-8.
Abstract | Links | BibTeX | Tags: lattice dynamics, phonon, thermal transport
@inbook{Sun2020,
title = {Exploring nanoscale heat transport via neutron scattering},
author = {Qiyang Sun and Chen W. Li},
editor = {Bolin Liao},
url = {https://iopscience.iop.org/book/978-0-7503-1738-2},
isbn = {978-0-7503-1736-8},
year = {2020},
date = {2020-03-01},
pages = {11-1~14},
abstract = {Nanoscale Energy Transport
Emerging phenomena, methods and applications
This book brings together leading names in the field of nanoscale energy transport to provide a comprehensive and insightful review of this developing topic. The text covers new developments in the scientific basis and the practical relevance of nanoscale energy transport, highlighting the emerging effects at the nanoscale that qualitatively differ from those at the macroscopic scale. Throughout the book, microscopic energy carriers are discussed, including photons, electrons and magnons. State-of-the-art computational and experimental nanoscale energy transport methods are reviewed, and a broad range of materials system topics are considered, from interfaces and molecular junctions to nanostructured bulk materials. Nanoscale Energy Transport is a valuable reference for researchers in physics, materials, mechanical and electrical engineering, and it provides an excellent resource for graduate students.},
keywords = {lattice dynamics, phonon, thermal transport},
pubstate = {published},
tppubtype = {inbook}
}
Nanoscale Energy Transport
Emerging phenomena, methods and applications
This book brings together leading names in the field of nanoscale energy transport to provide a comprehensive and insightful review of this developing topic. The text covers new developments in the scientific basis and the practical relevance of nanoscale energy transport, highlighting the emerging effects at the nanoscale that qualitatively differ from those at the macroscopic scale. Throughout the book, microscopic energy carriers are discussed, including photons, electrons and magnons. State-of-the-art computational and experimental nanoscale energy transport methods are reviewed, and a broad range of materials system topics are considered, from interfaces and molecular junctions to nanostructured bulk materials. Nanoscale Energy Transport is a valuable reference for researchers in physics, materials, mechanical and electrical engineering, and it provides an excellent resource for graduate students.
Emerging phenomena, methods and applications
This book brings together leading names in the field of nanoscale energy transport to provide a comprehensive and insightful review of this developing topic. The text covers new developments in the scientific basis and the practical relevance of nanoscale energy transport, highlighting the emerging effects at the nanoscale that qualitatively differ from those at the macroscopic scale. Throughout the book, microscopic energy carriers are discussed, including photons, electrons and magnons. State-of-the-art computational and experimental nanoscale energy transport methods are reviewed, and a broad range of materials system topics are considered, from interfaces and molecular junctions to nanostructured bulk materials. Nanoscale Energy Transport is a valuable reference for researchers in physics, materials, mechanical and electrical engineering, and it provides an excellent resource for graduate students.
Bansal, D; Li, Chen W; Said, A H; Abernathy, D L; Yan, J
Electron-phonon coupling and thermal transport in the thermoelectric compound Mo3Sb7−xTex Journal Article
In: Physical Review B, vol. 92, no. 21, pp. 214301, 2015.
Links | BibTeX | Tags: electron-phonon coupling, phonon, thermal transport, thermoelectric
@article{bansal_electron-phonon_2015-2,
title = {Electron-phonon coupling and thermal transport in the thermoelectric compound Mo3Sb7−xTex},
author = {D Bansal and Chen W Li and A H Said and D L Abernathy and J Yan},
url = {https://link.aps.org/doi/10.1103/PhysRevB.92.214301},
doi = {10.1103/PhysRevB.92.214301},
year = {2015},
date = {2015-01-01},
journal = {Physical Review B},
volume = {92},
number = {21},
pages = {214301},
keywords = {electron-phonon coupling, phonon, thermal transport, thermoelectric},
pubstate = {published},
tppubtype = {article}
}